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Proceedings Paper

MBE growth and fabrication of 2.Xum InGa(As)Sb/AlGaAsSb laser
Author(s): Yu Zhang; Yuzhi Song; Junliang Xing; Yongping Liao; Chuanchuan Li; Yingqiang Xu; Yun Xu; Guofeng Song; Zhichuan Niu
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Paper Abstract

2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.

Paper Details

Date Published: 21 November 2014
PDF: 7 pages
Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 926710 (21 November 2014); doi: 10.1117/12.2071640
Show Author Affiliations
Yu Zhang, Institute of Semiconductors (China)
Yuzhi Song, Institute of Semiconductors (China)
Junliang Xing, Institute of Semiconductors (China)
Yongping Liao, Institute of Semiconductors (China)
Chuanchuan Li, Institute of Semiconductors (China)
Yingqiang Xu, Institute of Semiconductors (China)
Yun Xu, Institute of Semiconductors (China)
Guofeng Song, Institute of Semiconductors (China)
Zhichuan Niu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 9267:
Semiconductor Lasers and Applications VI
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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