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Proceedings Paper

Optimization of 1300-nm quantum well laser on GaAs substrates
Author(s): Ning An; Zhipeng Wei; Xuan Fang; Guojun Liu; Xiaohui Ma
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Paper Abstract

The high-performance InGaAsSb/GaAsSb/GaAs lasers emitting 1300 nm is simulated. Compared to the type-II quantum well GaAsSb/GaAs, In0.48Ga0.52As0.98Sb0.02/GaAs0.98Sb0.22 has large bandoffset which will offer a better electron confinement. And GaAs0.98Sb0.22 can reduce the effective strain of the highly lattice mismatched InGaAsSb quantum well. The transparent carrier densities of active unit is as low as 0.72×1018 cm-3. The threshold current and slope efficiency of the InGaAsSb/GaAsSb/GaAs three quantum wells laser is equal to 83 mA and 0.62W/A. When the current is over 93 mA, external efficiency will reach 0.72. In order to further enhance the performance of InGaAsSb/GaAsSb quantum well (QW) laser, the asymmetric (0.5 μm/1.5 μm) waveguide structure is also studied.

Paper Details

Date Published: 9 December 2014
PDF: 6 pages
Proc. SPIE 9294, International Symposium on Optoelectronic Technology and Application 2014: Development and Application of High Power Lasers, 92940W (9 December 2014); doi: 10.1117/12.2071603
Show Author Affiliations
Ning An, Changchun Univ. of Science and Technology (China)
Zhipeng Wei, Changchun Univ. of Science and Technology (China)
Xuan Fang, Changchun Univ. of Science and Technology (China)
Guojun Liu, Changchun Univ. of Science and Technology (China)
Xiaohui Ma, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9294:
International Symposium on Optoelectronic Technology and Application 2014: Development and Application of High Power Lasers
Guofan Jin; Songlin Zhuang; Jennifer Liu, Editor(s)

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