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Proceedings Paper

Energy relaxation of hot holes in GaAs grown on Si
Author(s): Kai Shum; Yoshihiro Takiguchi; Jihad M. Mohaidat; Feng Liu; Robert R. Alfano; Hadis Morkoc
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Paper Abstract

I-lot hole energy relaxation dynamics are reported using time- and energy-resolved photoluminescence spectroscopy. The hole cooling rate is determined to be smaller than expected bed on hole scatterings with longitudinal optical phonons.

Paper Details

Date Published: 1 August 1990
PDF: 6 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20716
Show Author Affiliations
Kai Shum, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Yoshihiro Takiguchi, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Jihad M. Mohaidat, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Feng Liu, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Robert R. Alfano, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Hadis Morkoc, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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