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Proceedings Paper

Physical properties of ITO thin films prepared by ion-assisted electron beam evaporation
Author(s): Yang Qiu; Yangli Jin; Hua Zhao; Bo Xu; Jiajia Wang
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Paper Abstract

Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method. Properties such as microstructure, morphology, sheet resistance and optical transmittance were investigated by X-ray diffractometer, SEM, four-point probe and UV-VIS-IR spectrophotometer, respectively. Lattice constant, inner stress level and energy band gap (Eg) of ITO thin films as-deposited were calculated and discussed. The mechanical properties of ITO thin films were studied by scratching method. The measurements were performed by scratch tester and the results were recorded as acoustic emission spectra and scratch track images taken by SEM. Relationship between inner stress level and mechanical performance was investigated in detail.

Paper Details

Date Published: 18 December 2014
PDF: 6 pages
Proc. SPIE 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies, 929505 (18 December 2014); doi: 10.1117/12.2071544
Show Author Affiliations
Yang Qiu, China Building Materials Academy (China)
Yangli Jin, China Building Materials Academy (China)
Hua Zhao, China Building Materials Academy (China)
Bo Xu, China Building Materials Academy (China)
Jiajia Wang, China Building Materials Academy (China)


Published in SPIE Proceedings Vol. 9295:
International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies
Guofan Jin; Songlin Zhuang; Jennifer Liu, Editor(s)

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