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Proceedings Paper

Direct measurement of ultrafast carrier processes in optical probing of GaInAs-type narrow band gap semiconductors
Author(s): Clifford R. Pollock; Brian J. Zook; David Cohen; Alphan Sennaroglu
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Paper Abstract

The relaxation time of hot carriers in bulk Ga47In053As has been measured as a function of excitation energy near and above the conduction band minimum, and as a function of carrier density. The carrier relaxation rate increases dramatically with excess energy, due to the additional energy decay provided by the LO phonons. As a function of carrier density, the scattering rate is maximum at densities below 1018 cm3, but decreases for higher carrier concentrations, falling roughly by half at 1019 cm3.

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20715
Show Author Affiliations
Clifford R. Pollock, Cornell Univ. (United States)
Brian J. Zook, Cornell Univ. (United States)
David Cohen, Cornell Univ. (United States)
Alphan Sennaroglu, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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