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Proceedings Paper

Electron-hole plasma thermalization in the GaAs/AlGaAs system: bulk, quantum wells, and superlattices
Author(s): Karl Leo; Wolfgang W. Ruehle; Elisabeth Bauser; Klaus H. Ploog
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Paper Abstract

We present experimental results for the thermalization of hot electron-hole plasma in bulk GaAs, AlGa1_As, GaAs/A1GaAs quantum wells and GaAs/AlAs superlattices. The results are compared with calculations of the thermalization of an electron-hole plasma with the lattice, taking into account different electron and hole temperatures and a nonequilibnum of the optical phonons. Several different situations are simulated: Cooling as a function of the excitation density and the excess photon energy, cooling in doped samples, and heating of a laser-excited plasma to an elevated lattice temperature. The qualitative agreement with our experimental results is generally good. However, experimentally observed reductions of the energy transfer rate seem to be larger than theory predicts.

Paper Details

Date Published: 1 August 1990
PDF: 12 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20714
Show Author Affiliations
Karl Leo, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Wolfgang W. Ruehle, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Elisabeth Bauser, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Klaus H. Ploog, Max-Planck-Institut fuer Festkoerperforschung (Germany)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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