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Proceedings Paper

Design of the small pixel pitch ROIC
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Paper Abstract

Since the technology trend of the third generation IRFPA towards resolution enhancing has steadily progressed,the pixel pitch of IRFPA has been greatly reduced.A 640×512 readout integrated circuit(ROIC) of IRFPA with 15μm pixel pitch is presented in this paper.The 15μm pixel pitch ROIC design will face many challenges.As we all known,the integrating capacitor is a key performance parameter when considering pixel area,charge capacity and dynamic range,so we adopt the effective method of 2 by 2 pixels sharing an integrating capacitor to solve this problem.The input unit cell architecture will contain two paralleled sample and hold parts,which not only allow the FPA to be operated in full frame snapshot mode but also save relatively unit circuit area.Different applications need more matching input unit circuits. Because the dimension of 2×2 pixels is 30μm×30μm, an input stage based on direct injection (DI) which has medium injection ratio and small layout area is proved to be suitable for middle wave (MW) while BDI with three-transistor cascode amplifier for long wave(LW). By adopting the 0.35μm 2P4M mixed signal process, the circuit architecture can make the effective charge capacity of 7.8Me- per pixel with 2.2V output range for MW and 7.3 Me- per pixel with 2.6V output range for LW. According to the simulation results, this circuit works well under 5V power supply and achieves less than 0.1% nonlinearity.

Paper Details

Date Published: 11 November 2014
PDF: 9 pages
Proc. SPIE 9275, Infrared, Millimeter-Wave, and Terahertz Technologies III, 92750V (11 November 2014); doi: 10.1117/12.2071379
Show Author Affiliations
Qinghua Liang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Dazhao Jiang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Honglei Chen, Shanghai Institute of Technical Physics (China)
Yongcheng Zhai, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Lei Gao, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9275:
Infrared, Millimeter-Wave, and Terahertz Technologies III
Cunlin Zhang; Xi-Cheng Zhang; Masahiko Tani, Editor(s)

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