Share Email Print
cover

Proceedings Paper

Study of the ICP etching process on InGaAs/InP array devices
Author(s): Xiaochen Niu; Jun Deng; Yanli Shi; Ying Tian; Deshu Zou
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

It was very different between the etching rate of large patterns and narrow grooves on InGaAs/InP materials by inductively coupled plasma (ICP) technology. With the aim of high etching rate, good morphology, smooth interfaces and fewer defects, the etching mechanisms of ICP via changing gas flow rate, chamber pressure and RF power have been analyzed. Some recipes have been found to achieve a narrow stripe and deep groove with good uniformity, interface and morphology via high etching rate and good selectivity. The different phenomena during etching the large patterns and narrow grooves have been explained and the sets of parameters have been summarized that is adapted to the array device on InGaAs/InP materials during the ICP process.

Paper Details

Date Published: 20 November 2014
PDF: 6 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93000Q (20 November 2014); doi: 10.1117/12.2071022
Show Author Affiliations
Xiaochen Niu, Beijing Univ. of Technology (China)
Jun Deng, Beijing Univ. of Technology (China)
Yanli Shi, Kunming Institute of Physics (China)
Ying Tian, Beijing Univ. of Technology (China)
Deshu Zou, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

© SPIE. Terms of Use
Back to Top