Share Email Print
cover

Proceedings Paper

Determination of the intervalley X6 --> Gamma6, L6 scattering time and the density of states effective mass of the X7 band in GaAs by picosecond time-resolved absorption spectroscopy
Author(s): Wubao B. Wang; Nathan Ockman; Michael A. Cavicchia; Ming Yan; Robert R. Alfano
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The dynamics of electrons in the X 6 valley for a GaAs crystal was measured by time-resolved absorption spectroscopy. An infrared picosecond probe pulse was used to monitor the growth and decay of the population in the X o valley subsequent to excitation by a 527 nm pump pulse. The intervalley X , F 6' L 6 scattering time was determined from the time evolution of electrons in the x 6 valley to be 700 500 fs by a rate equation analysis. The X 6-X absorption spectrum of GaAs was obtained by the time-resolved pump-JR-probe technique by varying the probe wavelength from 2.16 m to 3.9 m. It gives the energy gap between the minima of the X and X bands to be 0.345 eV, and the density of states effective mass for the X band to be 0.48 m

Paper Details

Date Published: 1 August 1990
PDF: 12 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20710
Show Author Affiliations
Wubao B. Wang, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Nathan Ockman, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Michael A. Cavicchia, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Ming Yan, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Robert R. Alfano, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

© SPIE. Terms of Use
Back to Top