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Proceedings Paper

Intervalley scattering times from the rigid-pseudoion method
Author(s): Stefan Zollner; Sudha Gopalan; Manuel Cardona
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Paper Abstract

We have used the rigid-pseudoion method (with q-dependent matrix elements and a realistic non-parabolic band structure) to calculate the lifetimes of electrons at the L- and X-points in GaAs as a function of temperature (L: 2.2±0.5 p5, X: 130±20 fs at room temperature). The contribution of the TA phonons to LF-scattering explains the discrepancy between the experiments of Shah and Kash, performed at two different temperatures. About 80% of the carriers at X scatter into the L-valleys. The intervalley scattering times in the F-valley for electrons with an energy of 165 meV above the L-point are found to be 750±100 fs at helium temperatures (100 fs for electrons with an energy of 270 meV). These results compare favorably with recent femtosecond and CW laser experiments.

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20709
Show Author Affiliations
Stefan Zollner, Max-Planck-Institut fuer Festkoeperforschung (United States)
Sudha Gopalan, Univ. of Western Ontario (Germany)
Manuel Cardona, Max-Planck-Institut fuer Festkoerperforschung (Germany)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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