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Proceedings Paper

Learning from native defects on EUV mask blanks
Author(s): Emily Gallagher; Alfred Wagner; Mark Lawliss; Gregory McIntyre; Kazunori Seki; Takeshi Isogawa; Steven Nash
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Paper Abstract

Defects in the EUV mask blank are one of the largest hurdles to achieving manufacturing readiness of EUV masks. For defect-free masks, the obvious approach is to order blanks that do not have defects or to shift the pattern so that remaining defects do not create a printed defect on wafer. The approach during development should be different. At this learning phase, it is wise to study the defects as they occur naturally on the EUV mask blank. This paper outlines a comprehensive approach to building a mask specifically to showcase the native defects so that they can be studied and repairs can be attempted. The method applied to mask build, defect inspection and characterization will be reviewed in detail. Printability of the mask defects of interest are characterized using both wafer printing and EUV microscope data. Repairs are attempted and characterized. In the end, the impact of native defects is discussed along with the viability of various repair methods.

Paper Details

Date Published: 28 July 2014
PDF: 8 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560K (28 July 2014); doi: 10.1117/12.2070871
Show Author Affiliations
Emily Gallagher, IBM Corp. (United States)
Alfred Wagner, IBM Corp. (United States)
Mark Lawliss, IBM Corp. (United States)
Gregory McIntyre, IBM Corp. (United States)
Kazunori Seki, Toppan Photomasks, Inc. (United States)
Takeshi Isogawa, Toppan Photomasks, Inc. (United States)
Steven Nash, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

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