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Proceedings Paper

Gamma -> L intervalley and polar optic scattering times in GaAs from cw hot electron luminescence spectroscopy
Author(s): Wolfgang K. P. Hackenberg; Gerhard Fasol; Elisabeth Bauser; Klaus H. Ploog
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Paper Abstract

We deduce the F-L intervalley and poiar optic phonon scattering times of hot electrons in bulk GaAs from cw hot (e, A°) luminescence spectra as a function of electron kinetic energy at low excitation densities. We obtain the lifetime broadening due to these two processes from comparison with lineshape calculations using a 16x16 k.p Hamiltonian, a full integration over k-space and a dipole model for the optical matrix elements. We find for the LO-phonon emission time tLO=(l32±lO)fS. The threshold for IT-*L scattering is determined as (330±1O)meV, above which a distinct decrease in total lifetime is observed. Minimum F÷L scattering times are l5Ofs to 200fs. We discuss an estimation for the deformation potential DTL.

Paper Details

Date Published: 1 August 1990
PDF: 6 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20708
Show Author Affiliations
Wolfgang K. P. Hackenberg, Cavendish Lab./Univ. of Cambridge (United Kingdom)
Gerhard Fasol, Cavendish Lab./Univ. of Cambridge (United Kingdom)
Elisabeth Bauser, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Klaus H. Ploog, Max-Planck-Institut fuer Festkoerperforschung (Germany)

Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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