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Proceedings Paper

Femtosecond investigations of optical switching and X(3) in GaAs waveguides
Author(s): Michael J. LaGasse; Kristin K. Anderson; Christine A. Wang; Hermann A. Haus; James G. Fujimoto
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Paper Abstract

We describe a new technique for performing femtosecond transient measurements of nonlinear index and absorption in waveguide devices. Using a time division interferometry technique in conjunction with a tunable femtosecond laser source we have performed the first measurement of the wavelength dependent nonresonant nonlinear index in A1GaAs. Contributions to nonlinear index arise from both virtual as well as real population mediated processes depending on the wavelength detuning from resonance. Complementary pump-probe measurements of transient absorption provide information on excited state population as well as two-photon induced absorption processes. These measurements provide imformation on the mechanism and dynamics of fundamental nonlinear optical processes below the band edge in semiconductors and are relevant to possible all optical switching applications in waveguide devices.

Paper Details

Date Published: 1 August 1990
PDF: 12 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20707
Show Author Affiliations
Michael J. LaGasse, Massachusetts Institute of Technology (United States)
Kristin K. Anderson, Massachusetts Institute of Technology (United States)
Christine A. Wang, Lincoln Lab./MIT (United States)
Hermann A. Haus, Massachusetts Institute of Technology (United States)
James G. Fujimoto, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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