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Proceedings Paper

Monolithic CMOS-MEMS integration for high-g accelerometers
Author(s): Vinayak Narasimhan; Holden Li; Chuan Seng Tan
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Paper Abstract

This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC’s SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 µm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.

Paper Details

Date Published: 31 October 2014
PDF: 10 pages
Proc. SPIE 9254, Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III, 925410 (31 October 2014); doi: 10.1117/12.2070667
Show Author Affiliations
Vinayak Narasimhan, Nanyang Technological Univ. (Singapore)
Holden Li, Nanyang Technological Univ. (Singapore)
Chuan Seng Tan, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 9254:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
Keith L. Lewis; Mark T. Gruneisen; Miloslav Dusek; Richard C. Hollins; Thomas J. Merlet; John G. Rarity; Alexander Toet, Editor(s)

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