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Proceedings Paper

Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering
Author(s): Dai-sik Kim; Peter Y. Yu
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Paper Abstract

Relaxation of hot carriers excited by subpicosecond laser pulses has been studied by Raman scattering in GaAs/AlAs multiple quantum wells with well widths varying between 100 and 1000 A. The hot phonon population observed by Raman scattering is found to decrease with the well width despite the fact that the hot electron temperature remains constant. The results are explained in terms of confinement of both electrons and optical phonons in quantum wells.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20706
Show Author Affiliations
Dai-sik Kim, Univ. of California/Berkeley aand Lawrence Berkeley Lab (United States)
Peter Y. Yu, Univ. of California/Berkeley aand Lawrence Berkeley Lab (United States)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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