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Proceedings Paper

Picosecond nonlinear optical characterization of GaAs at lamda=1.064 um
Author(s): Antoniangelo Agnesi; Gian Piero Banfi; Mauro M. Costa; Martina Ghigliazza; Giancarlo C. Reali
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Paper Abstract

We have characterized through degenerate four wave mixing (DFWM) the nonlinear optical response of bulk GaAs at =1.O64 tim. At the lower intensities, for the compensated samples, the reflectivity is accounted by a 3rd order nonlinearity, mainly due to free carrier generation, with an effective x3 at 30 P5 of 2-3x1 0b0 esu and a decay time ≤ l ns. From high intensity data we derive for all samples a two photon absorption coefficient f310 cm/GW , in agreement with the most recent reported values.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20705
Show Author Affiliations
Antoniangelo Agnesi, Univ. di Pavia (Italy)
Gian Piero Banfi, Univ. di Pavia (Italy)
Mauro M. Costa, Univ. di Pavia (Italy)
Martina Ghigliazza, Univ. di Pavia (Italy)
Giancarlo C. Reali, Univ. di Pavia (Italy)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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