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Proceedings Paper

Study on growth of large area mercuric iodide polycrystalline film and its x-ray imaging
Author(s): Gang Xu; Yanfei Guo; Zengzhe Xi; Zhi Gu; Lan Zhang; Wentao Yu; Xuming Ma; Bo Li
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Paper Abstract

Tetragonal mercuric iodide, as a group of wide band gap semiconductors, has been widely investigation during most of the last half-century, applied on room-temperature X-ray and gamma-ray spectrometers. Up to the present, Mercuric iodide (HgI2) is still thought to be one of the most outstanding vitality semiconductor materials because of its wide band gap, for which the device was required to be high resistivity, high atomic number, adequate mechanical strength, long carrier lifetimes and high mobility-lifetime produces. Now, HgI2 polycrystalline films are being developed as a new detector technology for digital x-ray imaging. In this research, HgI2 polycrystalline films with different surface areas of 1 and 36 cm2 were grown by vapor sublimation method within a self-design growth furnace. XRD, SEM and J-V analysis were used to characterize the properties of these as-grown films. The results of XRD show that the ratio of (001) / (hkl) on all as-grown films is amount to be 90% for the area of 1 cm2 films. Grain size of 1 cm2 films was measured to be 120-150 μm. Their electrical resistivity were also determined to be about 1011 Ω·cm operated at the bias voltage of ~100 V by I-V characteristic measurement. Utilizing the polycrystalline film with the area of 36 cm2 deposited on TFT, we then prepared the direct image detector after capsulation for non-corrosive steel screw imaging. The results indicated that profile of screw was distinctly exhibited in digital x-ray imaging systems.

Paper Details

Date Published: 18 November 2014
PDF: 6 pages
Proc. SPIE 9298, International Symposium on Optoelectronic Technology and Application 2014: Imaging Spectroscopy; and Telescopes and Large Optics, 929809 (18 November 2014); doi: 10.1117/12.2070386
Show Author Affiliations
Gang Xu, Xi'an Univ. of Technology (China)
Yanfei Guo, Xi'an Univ. of Technology (China)
Zengzhe Xi, Xi'an Univ. of Technology (China)
Zhi Gu, Northwestern Polytechnical Univ. (China)
Lan Zhang, Nuctech Co. Ltd. (China)
Wentao Yu, Nuctech Co. Ltd. (China)
Xuming Ma, Nuctech Co. Ltd. (China)
Bo Li, Nuctech Co. Ltd. (China)


Published in SPIE Proceedings Vol. 9298:
International Symposium on Optoelectronic Technology and Application 2014: Imaging Spectroscopy; and Telescopes and Large Optics
Jannick P. Rolland; Changxiang Yan; Dae Wook Kim; Wenli Ma; Ligong Zheng, Editor(s)

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