Share Email Print
cover

Proceedings Paper

Effect of hot phonons on the ultrafast relaxation of holes in GaAs
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The ultrafast relaxation of electron-hole plasma photoexcited by a subpicosecond laser pulse in GaAs is investigated using ont Carlo method. The photoexcited carrier concentration is assumed to be 5x10 cm , and thephoton energy is assumed to 1.82 eV. The interaction between the heavy-holes and hot LO phonons has a minor effect on the cooling rates and the shape of hot phonon distribution but leads to an increased energy loss rates through the deformation potential interaction to compensate for the energy gained via LO phonon absorption.

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20703
Show Author Affiliations
Mohamed A. Osman, Washington State Univ. (United States)
Marc M. Cahay, Univ. of Cincinnati (United States)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

© SPIE. Terms of Use
Back to Top