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Proceedings Paper

Screening EUV mask absorbers for defect repair
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Paper Abstract

Five EUV film stacks were prepared and evaluated from the multiple viewpoints of mask repair process: etching property, CD control and wafer print. Etching property results revealed a thicker lower reflective (LR) layer stack showed good performance. Some types of defects were repaired and a CD comparison done with both CD-SEM and EUV microscope. It was found thinner total film stack (LR plus absorber) performs better than thicker ones for CD control. In addition, thicker LR performed better than thinner LR. Wafer print performance on the repaired site was evaluated through focus by imaging on an EUV microscope. Wafer printability performance showed that thinner total film stack performed better than a thicker one. Finally the best stack for EUV mask repair performance was determined to be a thinner total film stack and thicker a LR from all the various points of view.

Paper Details

Date Published: 28 July 2014
PDF: 9 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560N (28 July 2014); doi: 10.1117/12.2070251
Show Author Affiliations
Takeshi Isogawa, Toppan Photomasks, Inc. (United States)
Kazunori Seki, Toppan Photomasks, Inc. (United States)
Mark Lawliss, IBM Corp. (United States)
Emily Gallagher, IBM Corp. (United States)
Shinji Akima, Toppan Photomasks, Inc. (United States)
Toshio Konishi, Toppan Photomasks, Inc. (United States)

Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

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