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Proceedings Paper

High-temperature luminescence in light-emitting heterostructures with a high potential barriers based on GaSb
Author(s): A. Petukhov; L. Danilov; E. Ivanov; K. Kalinina; M. Mikhailova; G. Zegrya; N. Stoyanov; Yu. Yakovlev
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Paper Abstract

The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface (ΔEc = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence spectrum. In the entire temperature range under study, T = 290 – 480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated on the large the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the electroluminescence intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290 – 345 K, and a linear increase is observed at T < 345 K. Theoretical calculations have shown that this behavior of the temperature dependence of the optical power caused by competition between the radiative recombination, thermionic emission and Auger recombination.

Paper Details

Date Published: 6 January 2015
PDF: 6 pages
Proc. SPIE 9450, Photonics, Devices, and Systems VI, 94501Q (6 January 2015); doi: 10.1117/12.2070242
Show Author Affiliations
A. Petukhov, Ioffe Physical-Technical Institute (Russian Federation)
L. Danilov, Ioffe Physical-Technical Institute (Russian Federation)
E. Ivanov, Ioffe Physical-Technical Institute (Russian Federation)
K. Kalinina, Ioffe Physical-Technical Institute (Russian Federation)
M. Mikhailova, Ioffe Physical-Technical Institute (Russian Federation)
G. Zegrya, Ioffe Physical-Technical Institute (Russian Federation)
N. Stoyanov, Ioffe Physical-Technical Institute (Russian Federation)
Yu. Yakovlev, Ioffe Physical-Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 9450:
Photonics, Devices, and Systems VI
Pavel Tománek; Dagmar Senderáková; Petr Páta, Editor(s)

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