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Proceedings Paper

Effect of phonon confinement in quantum well systems
Author(s): Paolo Lugli; Paoli Bordone; S. Gualdi; Stephen M. Goodnick
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Paper Abstract

We discuss the role of LO-phonons confinement in quantum well systems, by comparing two different phonon models that have been proposed in the literature. A critical discussion concerning the use of macroscopic approaches for the description of phonons in two dimensional systems is presented. We use a Monte Carlo simulation which includes nonequilibrium phonon effects as well as carrier-carrier scattering to determine the effect of phonon confinent on the relaxation of photoexcited carriers in A1GaAs-GaAs quantum wells. Good agreement with available experimental data is found. Even at low excitation densities, intercarrier scattering and phonon reabsorption are important, and need to be taken into account in the interpretation of experimental data.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20702
Show Author Affiliations
Paolo Lugli, II Univ. di Roma (Italy)
Paoli Bordone, Univ. di Modena (Italy)
S. Gualdi, Univ. di Modena (Italy)
Stephen M. Goodnick, Oregon State Univ. (United States)

Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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