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Proceedings Paper

Characteristic analysis on the thermal noise of infrared CCD
Author(s): Rong-zhu Zhang; Xing Yu; Guo-dong Liu
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Paper Abstract

1.064 μm, 1.319 μm and 10.6 μm laser were used to irradiate silicon-based HgCdTe CCD image system. The temperature distribution of detector induced by infrared laser irradiating in the experiment above was simulated. The influence of temperature on photoelectric parameters of HgCdTe CCD was calculated. A CCD physical model of crosstalk saturation was built and the response characteristic of CCD under the influence of thermal noise was analyzed. Result indicated that the rise of temperature induced by laser irradiating little influenced imaging effect of CCD.

Paper Details

Date Published: 2 September 2014
PDF: 10 pages
Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 928407 (2 September 2014); doi: 10.1117/12.2070039
Show Author Affiliations
Rong-zhu Zhang, Sichuan Univ. (China)
Xing Yu, Sichuan Univ. (China)
Guo-dong Liu, China Academy of Engineering Physics (China)


Published in SPIE Proceedings Vol. 9284:
7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging
Yadong Jiang; Junsheng Yu; Bernard Kippelen, Editor(s)

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