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Proceedings Paper

High Efficiency Dc-Dc Converter Using GaN Transistors
Author(s): Cosmin-Andrei Tӑmaş; Cristian Grecu; Mihaela Pantazică; Ion Marghescu
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Paper Abstract

The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.

Paper Details

Date Published: 20 February 2015
PDF: 6 pages
Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92580G (20 February 2015); doi: 10.1117/12.2070029
Show Author Affiliations
Cosmin-Andrei Tӑmaş, Politehnica Univ. of Bucharest (Romania)
Cristian Grecu, Politehnica Univ. of Bucharest (Romania)
Mihaela Pantazică, Politehnica Univ. of Bucharest (Romania)
Ion Marghescu, Politehnica Univ. of Bucharest (Romania)

Published in SPIE Proceedings Vol. 9258:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII
Ionica Cristea; Marian Vladescu; Razvan Tamas, Editor(s)

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