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Proceedings Paper

Accurate mask model for advanced nodes
Author(s): Nacer Zine El Abidine; Frank Sundermann; Emek Yesilada; El Hadji Omar Ndiaye; Kushlendra Mishra; Sankaranarayanan Paninjath; Ingo Bork; Peter Buck; Olivier Toublan; Isabelle Schanen
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Paper Abstract

Standard OPC models consist of a physical optical model and an empirical resist model. The resist model compensates the optical model imprecision on top of modeling resist development. The optical model imprecision may result from mask topography effects and real mask information including mask ebeam writing and mask process contributions. For advanced technology nodes, significant progress has been made to model mask topography to improve optical model accuracy. However, mask information is difficult to decorrelate from standard OPC model. Our goal is to establish an accurate mask model through a dedicated calibration exercise. In this paper, we present a flow to calibrate an accurate mask enabling its implementation. The study covers the different effects that should be embedded in the mask model as well as the experiment required to model them.

Paper Details

Date Published: 28 July 2014
PDF: 9 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 925603 (28 July 2014); doi: 10.1117/12.2069977
Show Author Affiliations
Nacer Zine El Abidine, STMicroelectronics (France)
Frank Sundermann, STMicroelectronics (France)
Emek Yesilada, STMicroelectronics (France)
El Hadji Omar Ndiaye, Mentor Graphics Corp. (France)
Kushlendra Mishra, Adarsh Eco Space (India)
Sankaranarayanan Paninjath, Adarsh Eco Space (India)
Ingo Bork, Mentor Graphics Corp. (United States)
Peter Buck, Mentor Graphics Corp. (United States)
Olivier Toublan, Mentor Graphics Corp. (France)
Isabelle Schanen, LAHC, Institut de Microélectronique, Electromagnétisme et Photonique (France)


Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

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