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Proceedings Paper

Preparation and characterization of Ga2O3 and GaN nanoparticles
Author(s): E. Rusu; V. Ursaki; S. Raevschi; P. Vlazan
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Paper Abstract

In this communication, we present results on preparation of GaN nanoparticles by conversion of Ga2O3 nanocrystals in a flow of NH3 and H2. The monoclinic Ga2O3 nanoparticles have been prepared by hydrothermal method with gallium nitrate and sodium hydroxide as precursors. Ga2O3 nanowires are produced with increasing the duration of the hydrothermal process up to 24 hours. The production of β-phase Ga2O3 has been confirmed by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. According to XRD, Raman and FTIR spectra, wurtzite type GaN nanocrystals with an average size of 28.6 nm are obtained by nitridation of Ga2O3 nanoparticles. Doping of Ga2O3 nanomaterial with Eu3+ ions in the hydrothermal process is demonstrated, and the emission spectra of this Eu-doped nanomaterial are compared with those of Eu-doped nanoparticles prepared previously by solid state reactions.

Paper Details

Date Published: 20 February 2015
PDF: 6 pages
Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92581U (20 February 2015); doi: 10.1117/12.2069969
Show Author Affiliations
E. Rusu, Ghitu Institute of Electronic Engineering and Nanotechnologies (Moldova)
V. Ursaki, Ghitu Institute of Electronic Engineering and Nanotechnologies (Moldova)
S. Raevschi, Moldova State Univ. (Moldova)
P. Vlazan, National Institute for Research and Development in Electrochemistry and Condensed Matter (Romania)


Published in SPIE Proceedings Vol. 9258:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII
Ionica Cristea; Marian Vladescu; Razvan Tamas, Editor(s)

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