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Proceedings Paper

Nano-indentation investigations of (As2Se3)1-x: Snx and (As4S3Se3)1-x: Snx glasses
Author(s): D. V. Harea; E. E. Harea; O. V. Iaseniuc; M. S. Iovu
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Paper Abstract

Experimental results on some physical and optical properties of (As2Se3)1-x:Snx and (As4S3Se3)1-x:Snx (x = 0-10 at %) glasses and amorphous films (d~2.0 μm) are presented. The bulk chalcogenide glasses are studied by X-ray diffraction spectroscopy and nanoindentation methods. It is established that the addition of these amounts of tin (x = 0-10 at %) does not lead to significant changes in the physical properties of the glass, such as values of stress and Young’s modulus related to the modification of the density and compactness. It has been found that the addition of these amounts of tin in (As4S3Se3)1-x:Snx does not lead to significant changes in the glass physical properties, such as values of stress and Young’s modulus related to the modification of the density and compactness. The study of the photoplastic effect is performed in situ, with illumination of the bulk and thin film samples during indentation as well as their indentation after illumination with a green laser (λ = 532 nm) at a power of P = 50 mV/cm2. The hardness is calculated from load-displacement curves by the Oliver-Pharr method. A sharp increase in hardness is registered if the tin concentration exceeds a value of 34% Sn. The hardness H of (As2Se3)1-x:Snx films varies between 115 and 130 kg/mm2. It is found that the hardness H of amorphous thin films is generally higher than the hardness of bulk samples with the same chemical composition. In this study, we are focused on the mechanical characteristics of high-purity As2Se3: Snx thin films. Keyword: Chalcogenide glasses, hardness,

Paper Details

Date Published: 20 February 2015
PDF: 7 pages
Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92581T (20 February 2015); doi: 10.1117/12.2069894
Show Author Affiliations
D. V. Harea, Institute of Applied Physics (Moldova)
E. E. Harea, Institute of Applied Physics (Moldova)
O. V. Iaseniuc, Institute of Applied Physics (Moldova)
M. S. Iovu, Institute of Applied Physics (Moldova)


Published in SPIE Proceedings Vol. 9258:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII
Ionica Cristea; Marian Vladescu; Razvan Tamas, Editor(s)

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