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Proceedings Paper

Etched multilayer mask is better than conventional absorber mask
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Paper Abstract

The main problem in extreme ultra-violet (EUV) lithography for mass production is low source power. In order to overcome this problem, we suggest to use an etched multilayer mask introduced several years ago. The etched multilayer mask structure does not need an absorber stack and it was found that we could get higher aerial image slope and peak intensity than those of the conventional absorber mask structure. Also, the etched multilayer mask can reduce the pattern shift and horizontal-vertical (H-V) bias.

Paper Details

Date Published: 28 July 2014
PDF: 7 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560R (28 July 2014); doi: 10.1117/12.2069885
Show Author Affiliations
Guk-Jin Kim, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
In-Seon Kim, Hanyang Univ. (Korea, Republic of)
Michael Yeung, Fastlitho Inc. (United States)
Eytan Barouch, Boston Univ. (United States)


Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

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