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Proceedings Paper

First-principles study on the effects of the intrinsic defects in GaAs saturable absorber
Author(s): Xiaoyang Ma; Dechun Li; Shengzhi Zhao; Wen Cong; Guiqiu Li; Kejian Yang
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Paper Abstract

First-principles calculations are performed for the effects of the intrinsic defects in GaAs saturable absorber, using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional to correct the band gap. The defect energy levels corresponding to all point defects and their electrical characteristics are analyzed from the aspects of density of states and band structures. Furthermore, the partial band decomposed charge density of the defect bands are also been studied. The relationships between defect energy levels and EL2 deep-level defect will be helpful in ascertaining the origin of the EL2 deep-level defect in GaAs.

Paper Details

Date Published: 20 November 2014
PDF: 7 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 930009 (20 November 2014); doi: 10.1117/12.2069808
Show Author Affiliations
Xiaoyang Ma, Shandong Univ. (China)
Dechun Li, Shandong Univ. (China)
Shengzhi Zhao, Shandong Univ. (China)
Wen Cong, Shandong Univ. (China)
Guiqiu Li, Shandong Univ. (China)
Kejian Yang, Shandong Univ. (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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