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Proceedings Paper

Repairing native defects on EUV mask blanks
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Paper Abstract

Mask defectivity is a serious problem for all lithographic masks, but especially for EUV masks. Defects in the EUV blank are particularly challenging because their elimination is beyond control of the mask fab. If defects have been identified on a mask blank, patterns can be shifted to place as many blank defects as possible in regions where printing impact will be eliminated or become unimportant. For those defects that cannot be mitigated through pattern shift, repair strategies must be developed. Repairing defects that occur naturally in the EUV blank is challenging because the printability of these defects varies widely. This paper describes some types of native defects commonly found and begins to outline a triage strategy for defects that are identified on the blank. Sample defects best suited to nanomachining repair are treated in detail: repairs are attempted, characterized using mask metrology and then tested for printability. Based on the initial results, the viability of repairing EUV blank native defects is discussed.

Paper Details

Date Published: 8 October 2014
PDF: 9 pages
Proc. SPIE 9235, Photomask Technology 2014, 923516 (8 October 2014); doi: 10.1117/12.2069787
Show Author Affiliations
Mark Lawliss, IBM Corp. (United States)
Emily Gallagher, IBM Corp. (United States)
Michael Hibbs, IBM Corp. (United States)
Kazunori Seki, Toppan Photomasks, Inc. (United States)
Takeshi Isogawa, Toppan Electronics, Inc. (United States)
Tod Robinson, RAVE LLC (United States)
Jeff LeClaire, RAVE LLC (United States)


Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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