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Proceedings Paper

Finite element simulation of laser shock peening on bulk metallic glass
Author(s): Jie Fu; Huigang Shi; Chao Zheng; Ren Liu; Zhong Ji
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Paper Abstract

Laser shock peening (LSP) can be used to induce compressive residual stresses on the surface of a material, then to improve the mechanical properties such as performance of plasticity and fatigue. However, the residual stresses and their exact spatial distribution are very difficult to measure by experiment, especially for very small workpieces. In this paper, a finite-element model has been developed to numerically simulate the LSP process of bulk metallic glass (BMG) Zr41.2 Ti13.8Cu12.5Ni10Be22.5, and predict the stress distribution. The constitutive equation established in this work is hydrostatic-pressure sensitive and strain-rate dependent, it is based on the free volume model and Coulomb-Mohr yield criterion, and can describe such special deformation behaviors of BMG as strain softening. The simulated results show that, for one-side peening, along depth direction, the compressive residual stress gradually reduced to zero, then change to the tensile residual stress, but for two-side peening, the residual stress is from compressive to tensile and then to compressive along depth direction. These simulation results have a great significance to study the application of LSP in strengthening brittle amorphous alloys.

Paper Details

Date Published: 6 August 2014
PDF: 6 pages
Proc. SPIE 9281, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 92811T (6 August 2014); doi: 10.1117/12.2069737
Show Author Affiliations
Jie Fu, Shandong Univ. (China)
Huigang Shi, Shandong Univ. (China)
Chao Zheng, Shandong Univ. (China)
Ren Liu, Shandong Univ. (China)
Zhong Ji, Shandong Univ. (China)


Published in SPIE Proceedings Vol. 9281:
7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Eric Ruch; Shengyi Li, Editor(s)

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