Share Email Print
cover

Proceedings Paper

EUV patterned mask inspection performance of an advanced projection electron microscope (PEM) system for hp 16 nm and beyond
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The framework and the current status of a newly developed PEM pattern inspection system are presented. A die-to-die defect detection sensitivity of the developing system is investigated. A programmed defect mask was used for demonstrating the performance of the system. Defect images were obtained as difference images by comparing the PEM images “with-defects” to the PEM images “without-defects”. The image-processing system was also developed for dieto- die inspection. A targeted inspection-throughput of 19-hour inspection per mask with 16 nm pixel size for image capture was attained. Captured images of extrusion and intrusion defects in hp 64 nm L/S pattern were used for detection. Then 16 nm sized intrusion defect, which was our target size for hp 16 nm defect detection requirement, was identified without false defects. To improve the performance of hp 16 nm patterned mask inspection, defect detection requirements for hp 11 nm EUVL patterned mask inspection was studied.

Paper Details

Date Published: 28 July 2014
PDF: 7 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560M (28 July 2014); doi: 10.1117/12.2069723
Show Author Affiliations
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsueno Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Masahiro Hatakeyama, EBARA Corp. (Japan)
Takeshi Murakami, EBARA Corp. (Japan)
Kenji Terao, EBARA Corp. (Japan)


Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

© SPIE. Terms of Use
Back to Top