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Proceedings Paper

Research development of thermal aberration in 193nm lithography exposure system
Author(s): Yueqiang Wang; Yong Liu
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Paper Abstract

Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies.

Paper Details

Date Published: 21 August 2014
PDF: 8 pages
Proc. SPIE 9283, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 928314 (21 August 2014); doi: 10.1117/12.2069700
Show Author Affiliations
Yueqiang Wang, Institute of Optics and Electronics (China)
Univ. of Electronic Science and Technology of China (China)
Yong Liu, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9283:
7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Tianchun Ye; A. G. Poleshchuk; Song Hu, Editor(s)

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