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Proceedings Paper

AlGaInP single quantum well laser diodes
Author(s): David P. Bour; David W. Treat; K. J. Beernink; Ross D. Bringans
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Paper Abstract

The properties and low pressure organometallic vapor phase epitaxy of GaxIn$1-x)P/(AlGa)0.5In0.5P quantum well (QW) laser diode heterostructures with Al0.5In0.5P cladding layers, and having wavelength 614 < (lambda) < 754 nm, are described. At longer wavelengths ((lambda) > 660 nm), threshold current densities under 200 A/cm2 and efficiencies greater than 75% result form a biaxially- compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance is achieved with strained, single QW active regions. The wavelength range may also be expanded into the previously difficult 700-nm band, by including InGaAsP or AlGaAsP QWs.

Paper Details

Date Published: 17 April 1995
PDF: 10 pages
Proc. SPIE 2380, UV and Visible Lasers and Laser Crystal Growth, (17 April 1995); doi: 10.1117/12.206954
Show Author Affiliations
David P. Bour, Xerox Palo Alto Research Ctr. (United States)
David W. Treat, Xerox Palo Alto Research Ctr. (United States)
K. J. Beernink, Xerox Palo Alto Research Ctr. (United States)
Ross D. Bringans, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2380:
UV and Visible Lasers and Laser Crystal Growth
Richard Scheps; Milan R. Kokta, Editor(s)

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