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Proceedings Paper

New phase-shifting technique for deep UV excimer laser based lithography
Author(s): Zsolt Bor; Joseph R. Cavallaro; Miklos Erdelyi; Motoi Kido; Chaitali Sengupta; Michael C. Smayling; Gabor Szabo; Frank K. Tittel; William L. Wilson
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Paper Abstract

This paper reports simulation and experimental details of a novel phase shifting technique based on laser interferometry. Phase shifting is one of the most promising techniques for the fabrication of high density DRAM's. In recent years many kinds of phase shifting methods have been proposed to extend the resolution limit and contrast of image patterns. These techniques however, have several problems that result from the phase shift elements on the mask, especially when applied to UV excimer laser illumination. A new technique will be described that is based on a one-layered reticle which is used as both a reflective and transmissive mask, irradiated from both the front and the back sides. A combination of both off-axis illumination, as well as phase shift are used in the new method. Both the relative path length of the two beams as well as their amplitude can be manipulated in such a way that near 100% contrast can be achieved in the final image. Experimental as well as simulation data are used to demonstrate this new method.

Paper Details

Date Published: 17 April 1995
PDF: 8 pages
Proc. SPIE 2380, UV and Visible Lasers and Laser Crystal Growth, (17 April 1995); doi: 10.1117/12.206950
Show Author Affiliations
Zsolt Bor, Jate Univ. (Hungary)
Joseph R. Cavallaro, Rice Univ. (United States)
Miklos Erdelyi, Jate Univ. (Hungary)
Motoi Kido, Rice Univ. (United States)
Chaitali Sengupta, Rice Univ. (United States)
Michael C. Smayling, Rice Univ. (United States)
Gabor Szabo, Jate Univ. (Hungary)
Frank K. Tittel, Rice Univ. (United States)
William L. Wilson, Rice Univ. (United States)


Published in SPIE Proceedings Vol. 2380:
UV and Visible Lasers and Laser Crystal Growth
Richard Scheps; Milan R. Kokta, Editor(s)

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