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Proceedings Paper

Etched multilayer mask in EUV lithography for 16 nm node and below
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Paper Abstract

Etched multilayer masks in EUV lithography for 16 nm node and below are better than conventional binary masks due to their higher image intensities and image slopes. However, aerial-image simulation of etched multilayer masks requires special care in order to obtain accurate results. In this paper, we first show that the usual Hopkins method for partial coherence simulation gives very inaccurate results when off-axis illumination is used. We then discuss an enhanced Hopkins method which provides far greater accuracy. Simulation results are presented to demonstrate the importance of using the enhanced Hopkins method for EUV lithography simulation.

Paper Details

Date Published: 28 July 2014
PDF: 7 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560Q (28 July 2014); doi: 10.1117/12.2069404
Show Author Affiliations
Guk-Jin Kim, Hanyang Univ. (Korea, Republic of)
Michael Yeung, Fastlitho Inc. (United States)
Eytan Barouch, Boston Univ. (United States)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

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