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Proceedings Paper

Source optimization using simulated annealing algorithm
Author(s): Haibo Jiang; Tingwen Xing; Meng Du
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Paper Abstract

As lithography still pushing toward to lower k􀬵 imaging, traditional illumination source shapes may perform marginally in resolving complex layouts, freeform source shapes are expected to achieve better image quality. Illumination optimization as one of inverse lithography techniques attempts to synthesize the input source which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. This paper proposes a method to optimize illumination by using simulated annealing algorithms (SA). A synthesis of the NILS values at multi-critical mask locations over a focus range is chose as the merit function. The advantage of the SA algorithm is that it can identify optimum source solutions without any additional apriori knowledge about lithographic processes. The results show that our method can provide great improvements in both image quality and DOF.

Paper Details

Date Published: 18 September 2014
PDF: 8 pages
Proc. SPIE 9282, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 928239 (18 September 2014); doi: 10.1117/12.2069398
Show Author Affiliations
Haibo Jiang, Institute of Optics and Electronics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Tingwen Xing, Institute of Optics and Electronics (China)
Meng Du, Institute of Optics and Electronics (China)
Graduate Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 9282:
7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment
Yudong Zhang; Wei Gao, Editor(s)

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