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Proceedings Paper

Modeling of normal incidence absorption in p-type GaAs/AlGaAs quantum well infrared detectors
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Paper Abstract

The absorption of infrared radiation at normal incidence in p-type GaAs/AlGaAs quantum wells, unlike in n-type, is fundamentally allowed. We have measured and theoretically modeled the bound-to-continuum absorption in these p-type materials. The infrared absorption coefficient was calculated are based on the electronic structure, wave functions and optical matrix elements obtained from an 8 X 8 envelope-function approximation (EFA) calculation. The 8 X 8 EFA Hamiltonian incorporates the coupling between the heavy, light, spin-orbit, and conduction bands. In calculating the continuum states for bound-to- continuum intersubband absorption, we do not enclose the well in an artificial box with infinite walls. A comparison of the theoretical absorption and measured photoresponse results verified the accuracy of our model and provided a basis for optimizing the design of p-type quantum wells for infrared detection.

Paper Details

Date Published: 24 April 1995
PDF: 13 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206932
Show Author Affiliations
Gail J. Brown, Air Force Wright Lab. (United States)
Frank Szmulowicz, Univ. of Dayton (United States)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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