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Proceedings Paper

Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects
Author(s): Brad Thiel; Michael Lercel; Benjamin Bunday; Matt Malloy
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Paper Abstract

SEMATECH has initiated a program to accelerate the development and commercialization of multi-electron beam based technologies as successor for wafer defect inspection in high volume semiconductor manufacturing. This paper develops the basic electron-optical performance requirements and establishes criteria for tool specifications. The performance variations within a large array of electron beams must be minimal in order to maximize defect capture rates while simultaneously minimizing false counts, so a series of experimental evaluations are described to quantify the random and systematic variations in beam current, spot size, detector channel noise level, and defect sensitivity.

Paper Details

Date Published: 2 October 2014
PDF: 7 pages
Proc. SPIE 9236, Scanning Microscopies 2014, 92360E (2 October 2014); doi: 10.1117/12.2069302
Show Author Affiliations
Brad Thiel, SUNY Polytechnic Institute (United States)
Michael Lercel, SEMATECH Inc. (United States)
Benjamin Bunday, SEMATECH Inc. (United States)
Matt Malloy, SEMATECH Inc. (United States)

Published in SPIE Proceedings Vol. 9236:
Scanning Microscopies 2014
Michael T. Postek; Dale E. Newbury; S. Frank Platek; Tim K. Maugel, Editor(s)

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