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Proceedings Paper

Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-um band
Author(s): Patrick J.P. Tang; Mark J. Pullin; S. J. Chung; Christopher C. Phillips; R. A. Stradling; A. G. Norman; Y. B. Li; L. Hart
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Paper Abstract

4-12 micrometers Photoluminescence (PL) and electroluminescence (EL) at room temperature are observed from In(As,Sb) undoped strained layer superlattices (SLS's) and SLS diodes. The SLS's are grown by molecular beam epitaxy on GaAs substrates and are composed of arsenic rich alloys clad between InAs layers. The long wavelength emission is accounted for by an extreme type II valence band offset equals 830x meV (where x in the Sb composition). Internal PL efficiencies greater than 10% for light emission up to 9 micrometers are observed at 12 K in spite of presumed large dislocation densities due to the epilayer/substrate mismatch (approximately 7%). This is consistent with the thesis that defects in As rich alloys are, as in InAs, resonant with the conduction band instead of forming non-radiative recombination centers in the band gap. The high radiative efficiencies even at room temperature are attributed to the suppression of Auger recombination in the type II superlattice. We report the first Electroluminescence spectra covering the 4 - 12 micrometers wavelength range from a series of uncooled SLS LED's. Clear atmospheric absorption features in the EL spectra demonstrate their usefulness for gas sensing applications. The growth of these devices on GaAs substrates offers the possibility of easy integration with existing III-V fabrication technologies.

Paper Details

Date Published: 24 April 1995
PDF: 10 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206930
Show Author Affiliations
Patrick J.P. Tang, Imperial College of Science, Technology and Medicine (United Kingdom)
Mark J. Pullin, Imperial College of Science, Technology and Medicine (United Kingdom)
S. J. Chung, Imperial College of Science, Technology and Medicine (United Kingdom)
Christopher C. Phillips, Imperial College of Science, Technology and Medicine (United Kingdom)
R. A. Stradling, Imperial College of Science, Technology and Medicine (United Kingdom)
A. G. Norman, Imperial College of Science, Technology and Medicine (United Kingdom)
Y. B. Li, Imperial College of Science, Technology and Medicine (United Kingdom)
L. Hart, Imperial College of Science, Technology and Medicine (United Kingdom)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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