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Proceedings Paper

New capabilities of GaAs detectors for UV applications
Author(s): Monique T. Constant; Dorothee T. Loridant; J. C. Camart; S. Meziere; Luc Boussekey; M. Chive
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Paper Abstract

The purpose of this paper is to introduce UV sensors based on GaAs material and specially suited for low light power detection in spectroscopic systems and energy measurements of UV radiation in industrial and biomedical applications. Of particular interest here are n-type GaAs planar photoconductors optimized for UV detection and UV dosimeters made of plasma hydrogenated n+-type GaAs. After a description of the devices and their technology, an analysis of their electrical and optical properties is given. The results obtained are reviewed in terms of static responsivity and efficiency as a function of wavelength.

Paper Details

Date Published: 24 April 1995
PDF: 7 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206928
Show Author Affiliations
Monique T. Constant, Univ. des Sciences et Technologies de Lille (France)
Dorothee T. Loridant, Univ. des Sciences et Technologies de Lille (France)
J. C. Camart, UMR/CNRS (France)
S. Meziere, UMR/CNRS (France)
Luc Boussekey, Univ. des Sciences et Technologies de Lille (France)
M. Chive, UMR/CNRS (France)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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