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Proceedings Paper

Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors
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Paper Abstract

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Paper Details

Date Published: 24 April 1995
PDF: 12 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206924
Show Author Affiliations
Rodrigo Martins, CEMOP/UNINOVA (Portugal)
Elvira Fortunato, CEMOP/UNINOVA (Portugal)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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