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Proceedings Paper

Investigations of vertical cavity surface emitting lasers (VCSEL) resonant cavities by photoreflectance spectroscopy
Author(s): P. D. Berger; Catherine Bru; Taha Benyattou; Andre L. Chenevas-Paule; Philippe Grosse
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Paper Abstract

Photomodulated reflectance spectra of vertical cavity surface emitting laser (VCSEL) wafers have been measured between 9 K and 300 K. Structures used are grown in the AlGaAs based system, and are top surface emitting ones centered near 800 nm, with a lambda cavity, similar to those currently found in literature. One consists of a n+ DBR (Distributed Bragg Reflector) mirror and the cavity, the other is a full one: n+ DBR mirror, cavity and p+ top DBR mirror. For both structures photoreflectance measurements between 300 K and 9 K give interesting information on quantum wells and static electric field in the cavity. In this paper we discuss about the potentialities of this technique for the calibration of VCSEL growth, and its unique non invasive capability to determine quantum well/cavity alignment at room temperature comparing photoreflectance and reflectivity measurements, for vertical cavity devices.

Paper Details

Date Published: 24 April 1995
PDF: 7 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206922
Show Author Affiliations
P. D. Berger, INSA de Lyon (France)
Catherine Bru, INSA de Lyon (France)
Taha Benyattou, INSA de Lyon (France)
Andre L. Chenevas-Paule, LETI/CEA (France)
Philippe Grosse, LETI/CEA (France)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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