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Proceedings Paper

Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability
Author(s): Alessandro Fantoni; Manuela Vieira; Rodrigo Martins
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Paper Abstract

The introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (`i-layer'), grown at a higher power density, present a high density of the defects and acts as `gettering centers' able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the `i-layer' position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.

Paper Details

Date Published: 24 April 1995
PDF: 8 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206917
Show Author Affiliations
Alessandro Fantoni, FCT-UNL/UNINOVA (Portugal)
Manuela Vieira, FCT-UNL/UNINOVA (Portugal)
Rodrigo Martins, FCT-UNL/UNINOVA (Portugal)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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