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Proceedings Paper

Hydrogenated amorphous silicon speed sensor based on the flying spot technique
Author(s): Manuela Vieira; Alessandro Fantoni; A. Felipe Macarico; Fernando Soares; Rodrigo Martins
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Paper Abstract

PIN devices based on hydrogenated amorphous silicon (a-Si:H) became fundamental elements of many different types sensors, based on either the transverse or the lateral photovoltaic effect. In the past we have developed a transient technique, called the Flying Spot Technique (FST), based on the lateral photoeffect. FST allows, not only to infer the ambipolar diffusion length but also the effective lifetime of the photogenerated carriers once the light spot velocity and geometry of the structure were known. In this paper we propose to apply this technique backwards in order to detect the path and velocity of an object that is moving in a light source direction. The light reflected back from the object is analyzed through p.i.n. structure being the transient transverse photovoltage dependent on the object movement (position and velocity). Assuming known the transport properties of the material and the geometry of the device and using a triangulation method we show that it is possible to map the object movement. Details concerning material characterization, simulation and device geometry are presented.

Paper Details

Date Published: 24 April 1995
PDF: 12 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206916
Show Author Affiliations
Manuela Vieira, FCT-UNL/UNINOVA (Portugal)
Alessandro Fantoni, FCT-UNL/UNINOVA (Portugal)
A. Felipe Macarico, FCT-UNL/UNINOVA (Portugal)
Fernando Soares, FCT-UNL/UNINOVA (Portugal)
Rodrigo Martins, FCT-UNL/UNINOVA (Portugal)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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