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Proceedings Paper

Test structures for modeling and fabrication of Fabry-Perot-type GaAs/AlGaAs waveguide modulators
Author(s): Sergiusz Z. Patela; Robert A. Lowkis; Regina Paszkiewicz; Bogdan Paszkiewicz; Marek J. Tlaczala; Jacek M. Radojewski; Anna Sankowska
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Paper Abstract

Modulator structures fabricated in GaAs/AlGaAs multilayer system offer the advantages of optoelectronic circuits integration and backup of well developed epitaxial layers technology. Fabry-Perot (F-P) waveguide-type modulators have been analyzed and fabricated in MOCVD produced GaAs/AlGaAs structures. Test structures have been developed to obtain the values of material and technological parameters necessary for exact modelling and successful technology development. Theoretical model of F-P modulator has been developed. The output intensity dependencies of F-P modulator on different input parameters are plotted and then obtained characteristics are considered in terms of fabrication technology and modulator applications. With measured electrical parameters, equivalent circuits of electrode structure has been built. The model has been used to analyze the frequency response of the device in the range from DC to RF. Finally, system approach is developed towards the processes of research and fabrication of Fabry-Perot type electro-optic modulator.

Paper Details

Date Published: 24 April 1995
PDF: 12 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206912
Show Author Affiliations
Sergiusz Z. Patela, Technical Univ. of Wroclaw (Poland)
Robert A. Lowkis, Technical Univ. of Wroclaw (Poland)
Regina Paszkiewicz, Technical Univ. of Wroclaw (Poland)
Bogdan Paszkiewicz, Technical Univ. of Wroclaw (Poland)
Marek J. Tlaczala, Technical Univ. of Wroclaw (Poland)
Jacek M. Radojewski, Technical Univ. of Wroclaw (Poland)
Anna Sankowska, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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