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Proceedings Paper

High-power flared semiconductor laser amplifiers
Author(s): Mario Dagenais; Si Hyung Cho; Ping-Hui S. Yeh; Stephen H. Fox; R. Prakasam; Peter J.S. Heim; Scott A. Merritt; C.-C. Lu; Vijayanand Vusirikala; Badri Prasad Gopalan; Suryaprasad Kareenahalli; Colin E. C. Wood
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Paper Abstract

A normal incidence tapered laser amplifier is shown to produce more than 4.5 W optical power at 810 nm in a diffraction-limited beam. A new angled-facet tapered laser amplifier has demonstrated as much as 5 W optical power in a diffraction-limited beam at 810 nm with only a few mWs of coupled input power. Angled-facet laser amplifiers exhibit near-ideal Gaussian beam characteristics. More than 1.9 W CW is obtained in a 970 nm angled-facet tapered laser amplifier. A near-ideal beam quality factor M2 is obtained.

Paper Details

Date Published: 24 April 1995
PDF: 12 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206910
Show Author Affiliations
Mario Dagenais, Univ. of Maryland/College Park (United States)
Si Hyung Cho, Univ. of Maryland/College Park (United States)
Ping-Hui S. Yeh, Univ. of Maryland/College Park (United States)
Stephen H. Fox, Univ. of Maryland/College Park (United States)
R. Prakasam, Univ. of Maryland/College Park (United States)
Peter J.S. Heim, Univ. of Maryland/College Park (United States)
Scott A. Merritt, Univ. of Maryland/College Park (United States)
C.-C. Lu, Univ. of Maryland/College Park (United States)
Vijayanand Vusirikala, Univ. of Maryland/College Park (United States)
Badri Prasad Gopalan, Univ. of Maryland/College Park (United States)
Suryaprasad Kareenahalli, Univ. of Maryland/College Park (United States)
Colin E. C. Wood, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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