Share Email Print
cover

Proceedings Paper

Defects and interfaces in low-temperature grown Ge/Si heterostructures
Author(s): Serge Oktyabrsky; Jagdish Narayan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Initial stages of misfit relaxation process in Ge epitaxial films grown by pulsed laser deposition on (001) Si substrates have been investigated by high-resolution transmission electron microscopy. Special emphasis is placed on conditions leading to a 2D (layer-by-layer) growth mode. The evolution of the dislocation network as a function of film thickness and thermal annealing is controlled by surface undulations and interactions between dislocations. The dislocation interactions leading to rearrangements in a nonequilibrium dislocation network driven by elastic interaction between parallel 60 degree(s) dislocation segments are discussed in detail. Based upon our experimental observations, we propose a model for the formation of stacking faults in heterostructures.

Paper Details

Date Published: 24 April 1995
PDF: 12 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206905
Show Author Affiliations
Serge Oktyabrsky, North Carolina State Univ. (United States)
Jagdish Narayan, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

© SPIE. Terms of Use
Back to Top