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Proceedings Paper

A high efficiency machining method of SiC: ion-enhanced atmospheric pressure plasma machining
Author(s): Baolu Shi; Xuhui Xie; Yifan Dai; Chunde Liao
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Paper Abstract

An ion-enhanced atmospheric pressure plasma machining (IAPPM) method is introduced to improve the processing efficiency of SiC. The argon inductively coupled plasma is generated in designed the IAPPM machine. SF6 chosen as the reactive gas is injected into the argon plasma where SF6 is broken down into fluorine radicals. The reactive atoms are delivered onto the surface of SiC, and SiF4 is generated which is exhausted in the gaseous form. The material removal rate is increased by bringing in the energetic ions bombardment. Three linear trenches were etched onto the S-SiC sample. The etch rate is 3μm/min. The surface becomes rough after the IAPPM process.

Paper Details

Date Published: 6 August 2014
PDF: 7 pages
Proc. SPIE 9281, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 928104 (6 August 2014); doi: 10.1117/12.2069012
Show Author Affiliations
Baolu Shi, National Univ. of Defense Technology (China)
Xuhui Xie, National Univ. of Defense Technology (China)
Yifan Dai, National Univ. of Defense Technology (China)
Chunde Liao, National Univ. of Defense Technology (China)


Published in SPIE Proceedings Vol. 9281:
7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Eric Ruch; Shengyi Li, Editor(s)

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