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Proceedings Paper

Pattern-based pre-OPC operation to improve model-based OPC runtime
Author(s): Piyush Verma; Fadi Batarseh; Shikha Somani; Jingyu Wang; Sarah McGowan; Sriram Madhavan
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Paper Abstract

Full chip model based Optical Proximity Correction (OPC) at advanced nodes involves iteratively modifying the drawn polygon shapes while simulating them through complex optical and resist models. Due to the computational complexity of the models and the large size of VLSI designs, these mask simulations run for very long times. In this study we propose a pattern replacement step to generate a partial mask solution before applying model based OPC correction. Since the pattern replacement step is very fast and model based OPC has to be applied only to a portion of the design, total mask generation runtime is significantly reduced.

Paper Details

Date Published: 8 October 2014
PDF: 11 pages
Proc. SPIE 9235, Photomask Technology 2014, 923506 (8 October 2014); doi: 10.1117/12.2068998
Show Author Affiliations
Piyush Verma, GLOBALFOUNDRIES Inc. (United States)
Fadi Batarseh, GLOBALFOUNDRIES Inc. (United States)
Shikha Somani, GLOBALFOUNDRIES Inc. (United States)
Jingyu Wang, GLOBALFOUNDRIES Inc. (United States)
Sarah McGowan, GLOBALFOUNDRIES Inc. (United States)
Sriram Madhavan, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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