Full chip model based Optical Proximity Correction (OPC) at advanced nodes involves iteratively modifying the drawn polygon shapes while simulating them through complex optical and resist models. Due to the computational complexity of the models and the large size of VLSI designs, these mask simulations run for very long times. In this study we propose a pattern replacement step to generate a partial mask solution before applying model based OPC correction. Since the pattern replacement step is very fast and model based OPC has to be applied only to a portion of the design, total mask generation runtime is significantly reduced.

Date Published: 8 October 2014
PDF: 11 pages
Proc. SPIE 9235, Photomask Technology 2014, 923506 (8 October 2014); doi: 10.1117/12.2068998

Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)