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Proceedings Paper

Enhancement AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing
Author(s): Jianjun Li; Shengjie Lin; Linjie He; Jun Han; Jun Deng
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Paper Abstract

The effect of intermixing in change InGaAs/AlGaAs quantum well structure using impurity-free vacancy disordering (IFVD) technique was investigated. Through the experiment we found that the magnitude of the blue shift changes with the annealing time and the thickness of the dielectric layer. The thicker dielectric layer under the same annealing temperature to withstand the longer, the larger blue shift we got. Cycle-annealing in high temperature for short time to ensure that quantum well were intermixing evidently under the condition of no obvious damage. 46 nm blue shift have been achieved by applying a cycle-annealing at 850°C in 6 minutes for 5 cyclesand the PL peak keep more than 80% of the as-grown sample. Finally, we found that the dielectric film of Si3N4 can suppress intermixing and protect the quality of the samples as the protective film.

Paper Details

Date Published: 21 August 2014
PDF: 7 pages
Proc. SPIE 9233, International Symposium on Photonics and Optoelectronics 2014, 92330H (21 August 2014); doi: 10.1117/12.2068982
Show Author Affiliations
Jianjun Li, Beijing Univ. of Technology (China)
Shengjie Lin, Beijing Univ. of Technology (China)
Linjie He, Beijing Univ. of Technology (China)
Jun Han, Beijing Univ. of Technology (China)
Jun Deng, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 9233:
International Symposium on Photonics and Optoelectronics 2014
Zhiping Zhou, Editor(s)

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